DOI: 10.15330/pcss.16.1.44-48

V.M. Kaminskii, Z.D. Kovalyuk and V.I. Ivanov

Structure and Physical Properties of In₂Se₃<Mn>, InSe<Mn> and InSe<Fe> Layered Crystals

I.M. Frantsevich Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine, Chernivtsi Department 5, Iryna Vilde St., 58001 Chernivtsi, Ukraine, е-mail: chimsp@ukrpost.ua

The influence of magnetic impurities on the properties of In2Se3 and InSе layered crystals was studied. The results indicate the formation of substitutional solid solutions in the In2Se3(1 wt. % Mn(, InSe(0.5 wt. % Mn( single crystals. Temperature dependences of electroconductivity across (σ(С) and along (σ||С) the С crystallographic axis of doped crystals were measured in the range of 80–400 K. The values of energy barrier height between the crystal layers ΔЕδ were evaluated for In2Se3(Mn( and InSe(Mn(. It was established that InSe(Fe( crystals exhibit ferromagnetic properties.
Keywords: layered crystals, solid solution, electroconductivity, ferromagnetics.

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