ÕV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMS
Ivanî-Frankivsk, May, 11-16, 2015, page 272
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ÕV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMSIvanî-Frankivsk, May, 11-16, 2015, page 272 |
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The Features of the Formation a Thin Silicon Oxide Layer on the Surface of Silicon Carbide in the Oxidation in Ozone PairsKonakova R.V., Okhrimenko O.B., Lytvyn O.S., Svetlichnyi A.M.
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