ΥV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMS

Ivanξ-Frankivsk, May, 11-16, 2015, page 207

 

Obtaining Regular Porous Gallium Arsenide Surface by Electrochemical Etching

Simchenko S.V., Dyadenchuk A.F.

 REFERENCE

1. Pores in III-V Semicoductors / H. Föll, S. Langa, J. Carstensen et al. // Advanced Materils. – 2003. – V. 15, N 3. – P. 183 – 198.
2. Waveguide structures based on porous indium phosphide / S. Langa, S. Frey, J. Carstensen et al. // Electrochemical and Solid-State Letters. – 2005. – V. 8, N 2. – P. C30 – C32.
3. Porous III – V compounds as nonlinear optical materials / I.M. Tiginyanu, I.V. Kravetsky.

  

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