ΥV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMSIvanξ-Frankivsk, May, 11-16, 2015, page 207 |
Obtaining Regular Porous Gallium Arsenide Surface by Electrochemical EtchingSimchenko S.V., Dyadenchuk A.F.REFERENCE1. Pores in III-V Semicoductors / H. Föll, S. Langa, J. Carstensen et al. // Advanced Materils. 2003. V. 15, N 3. P. 183 198. |