ΥV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMS

Ivanξ-Frankivsk, May, 11-16, 2015, page 44-45

 

Si and GaAs Nanostructures as Chemical Sensors

Ptashchenko O.O., Ptashchenko F.O.

 REFERENCE

1. Boarino L., Borini S., Amato G. Electrical properties of mesoporous silicon: from a surface effect to coulomb blockade and more // J. Electrochem. Soc. – 2009. – V. 156, No. 12. – P. K223–K226.
2. Pancheri L., Oton C. J., Gaburro Z. et al. Very sensitive porous silicon NO2 sensor // Sensors and actuators B. – 2003. – V. 89. – P. 237–239.
3. Yuan G. D., Zhou Y. B., Guo C. S. et al. Tunable electrical properties of silicon nanowires via surface-ambient chemistry // ACSNANO. – 2010.– V. 4, No. 6. – P. 3045–3052.
4. Ptashchenko O. O., Ptashchenko F. O., Yemets O. V. Effect of ammonia vapors on the surface current in silicon p-n junctions. // Photoelectronics. – 2006. – No. 16. – P. 89 – 93.

  

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