ÕV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMS

Ivanî-Frankivsk, May, 11-16, 2015, page 249

Electroluminescence Spectra of Light-Emitting InõGa1-õN/GaN Heterostructures at Reverse Bias at T = 300 K and 77 K

Vlasenko O.I., Veleschuk V.P., Kisselyuk M.P., Vlasenko Z.K.

 REFERENCE

1. M. Lahbabi, A. Ahaitouf, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, S.E. Kerns and D.V. Kerns. Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junctions in avalanche breakdown // J. Appl. Phys. 95 (2004) 1822.