ÕV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMS
Ivanî-Frankivsk, May, 11-16, 2015, page 245
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ÕV INTERNATIONAL CONFERENCE ON PHYSICS AND TECHNOLOGY OF THIN FILMS AND NANOSYSTEMSIvanî-Frankivsk, May, 11-16, 2015, page 245 |
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Effect of Surface Doping on The Gas Sensitivity of Si and GaAs P-N JunctionsPtashchenko O.O., Ptashchenko F.O., Gilmutdinova V.R., Bogdan O.V., Masleyeva N.V., Pecheryans'kyi O.V., Sevastyan A.P.
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