Doppler Broadening of Annihilation Line Study of Defect Structure in Advanced Optoelectronic Materials
REFERENCE
1. T. Kavetskyy, V. Tsmots, O. Šauša, A.L. Stepanov, Phys. Status Solidi C, 9(12), (2012), 2420.
2. T.S. Kavetskyy, V.M. Tsmots, O. Šauša, A.L. Stepanov, Semiconductors, 48(1), (2014), 9.
3. T. Kavetskyy, V. Tsmots, A. Kinomura, Y. Kobayashi, R. Suzuki, Hamdy F.M. Mohamed, O. Šauša, V. Nuzhdin, V. Valeev, A.L. Stepanov, J. Phys. Chem. B, 118(15), (2014), 4194.
4. T.S. Kavetskyy, V.M. Tsmots, S.Ya. Voloshanska, O. Šauša, A.L. Stepanov, Abstracts of 6th International Scientific and Technical Conference “Sensor Electronics and Microsystem Technologies” (SEMST-6) (Odessa, Ukraine, 29 September - 3 October, 2014), 226.
5. T.S. Kavetskyy, O. Šauša, T. Petkova, V. Boev, P. Petkov, A.V. Kukhta, A.L. Stepanov, In book: NATO Science for Peace and Security Series - A: Chemistry and Biology, Chapter 9 “Nanoscience Advances in CBRN Agents Detection, Information and Energy Security” (P. Petkov, D. Tsiulyanu, C. Popov, W. Kulisch, eds.), Berlin: Springer, (2015), 85.
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